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FUJI 2MBI200NB-120 1200V Dual IGBT Module (N Series)

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  • Configuration: 2-pack half-bridge (dual IGBT module)
  • Collector-Emitter Voltage (VCES): 1200 V
  • Continuous Collector Current (IC): 200 A
  • Pulse Collector Current (ICP): 400 A (1 ms max)
  • Gate-Emitter Voltage (VGES): ±20 V
  • Maximum Power Dissipation (Pc): 1500 W
  • Collector-Emitter Saturation Voltage (VCE(sat)): 3.3 V typical
  • Isolation Voltage: AC 2500 V (1 minute)
  • Operating Junction Temperature (Tj): Up to +150°C
  • Applications: AC/DC motor drives, UPS systems, high-power industrial switching

FUJI 2MBI200NB-120 1200V Dual IGBT Module (N Series).

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